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KTD1898 - Power Transistor

Features

  • z High VCEO,VCEO=80V. z High IC,IC=1A(DC). z Good HFE Linearity. z Low VCE(sat). z Complement the 2SB1260. Pb Lead-free KTD1898.

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Production specification Power Transistor FEATURES z High VCEO,VCEO=80V. z High IC,IC=1A(DC). z Good HFE Linearity. z Low VCE(sat). z Complement the 2SB1260. Pb Lead-free KTD1898 APPLICATIONS z NPN silicon transistor. ORDERING INFORMATION Type No. Marking KTD1898 DF SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 1A IC Collector Current -pulse PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.8t) 2 0.5 1 -55 to +150 A W W ℃ E153 Rev.A www.gmicroelec.