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KTA2014 - PNP Silicon Epitaxial Planar Transistor

Features

  • Power dissipation. (PC=200mW).
  • Excellent hFE Linearity.
  • Complementary to KTC4075.
  • Small package. Pb Lead-free Production specification KTA2014.

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PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.(PC=200mW)  Excellent hFE Linearity.  Complementary to KTC4075.  Small package. Pb Lead-free Production specification KTA2014 APPLICATIONS  General purpose application and switching application. ORDERING INFORMATION Type No. Marking KTA2014 SO/SY/SG SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -150 PC Collector Dissipation 100 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F047 Rev.A www.gmesemi.
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