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BL7N65 - N-Channel Power Mosfet

Features

  • RDS(ON) =1.35Ω@ VGS = 10V.
  • Ultra low gate charge ( typical 30 nC ) Pb Lead-free.
  • Low reverse transfer Capacitance ( CRSS = typical 18 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness Production specification BL7N65.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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7A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =1.35Ω@ VGS = 10V  Ultra low gate charge ( typical 30 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 18 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL7N65 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM Pulsed Drain Current EAS Avalanche Energy PD Power Dissipation Single Pulsed TJ Junction Temperature TOPR, Tstg Operating and Storage Temperature TO-220AB Value 650 ±20 7.0 28 450 100 +150 -55 to +150 Units V V A A mJ W ℃ ℃ X116 Rev.A www.gmesemi.
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