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~~D~~
FIELD EFFECT POYIER TRANSISTOR
IRFF232,233
4.5 AMPERES 200, 150 VOLTS
ROS(ON) =0.6 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS te'chnology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
IRFF233 Datasheet
