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IRF712 - FIELD EFFECT POWER TRANSISTOR

IRF712 Description

~[gjD~[ *i~ FIELD EFFECT POVVER TRANSISTOR IRF712,713 1.3 AMPERES 400, 350 VOLTS ROS(ON} = 5 n This series of N-Channel Enhancement-mode Power MO.

IRF712 Features

* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement

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Datasheet Details

Part number
IRF712
Manufacturer
GE
File Size
194.79 KB
Datasheet
IRF712-GE.pdf
Description
FIELD EFFECT POWER TRANSISTOR

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FIELD EFFECT POWER TRANSISTOR GE
GE IRF712-like datasheet