3N205 - (3N204 - 3N206) Silicon Dual Insulated-Gate Field-Effect Transistors

Product Overview

GE Solid State

Part number	3N205
Manufacturer	GE Solid State
File Size	389.88 KB
Description	(3N204 - 3N206) Silicon Dual Insulated-Gate Field-Effect Transistors
Datasheet	3N205 Datasheet
Note	This datasheet PDF includes multiple part numbers: 3N205, 3N204. Please refer to the document for exact specifications by model.
Additional preview pages of the 3N205 datasheet.

📁 Similar Datasheet

3N200 - SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR (Intersil Corporation)
3N201 - DUAL GATE MOSFET VHF AMPLIFIER (Motorola Inc)
3N202 - DUAL GATE MOSFET VHF AMPLIFIER (Motorola Inc)
3N203 - DUAL GATE MOSFET VHF AMPLIFIER (Motorola Inc)
3N204 - DUAL GATE MOS-FET (Motorola)
3N209 - DUAL GATE MOSFET VHF AMPLIFIER (Digitron Semiconductors)
3N210 - N-CHANNEL DUAL GATE MOS FIELD EFFECTTRANSISTORS (ETC)
3N211 - Dual Gate Mosfet VHF Amplifier(N-Channel/ Depletion) (Motorola Inc)

Other Datasheets by GE Solid State

3N206 - (3N204 - 3N206) Silicon Dual Insulated-Gate Field-Effect Transistors

Published: Mar 6, 2007 |