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MBM29LV016T-80 - 16M (2M x 8) BIT FLASH MEMORY

Download the MBM29LV016T-80 datasheet PDF. This datasheet also covers the MBM29LV016B variant, as both devices belong to the same 16m (2m x 8) bit flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • Single 3.0 V read, program and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type).
  • Minimum 100,000 program/erase cycles.
  • High performance 80 ns maximum access time.
  • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and t.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29LV016B_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29LV016T 16M (2M x 8) BIT Fujitsu Media Devices
MBM29LV016B 16M (2M x 8) BIT FLASH MEMORY Fujitsu Media Devices
MBM29LV017 16M (2M x 8) BIT FLASH MEMORY Fujitsu Media Devices
MBM29LV001BC 1M (128K x 8) BIT FLASH MEMORY Fujitsu Media Devices
MBM29LV001TC 1M (128K x 8) BIT Fujitsu Media Devices

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29LV016T-12 16M (2M x 8) BIT FLASH MEMORY
MBM29LV016T-90 16M (2M x 8) BIT FLASH MEMORY
MBM29LV016B-12 16M (2M x 8) BIT FLASH MEMORY
MBM29LV016B-80 16M (2M x 8) BIT FLASH MEMORY
MBM29LV016B-90 16M (2M x 8) BIT FLASH MEMORY

Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16M (2M × 8) BIT DS05-20855-4E MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased.
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