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MBM29DL400TC-12 - 4M (512K x 8/256K x 16) BIT

Download the MBM29DL400TC-12 datasheet PDF (MBM29DL400TC included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 4m (512k x 8/256k x 16) bit.

Features

  • Single 3.0 V read, program, and erase Minimizes system level power requirements.
  • Simultaneous operations Read-while-Erase or Read-while-Program.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV400TC/BC) 48-pin TSOP(I) (Package suffix: PFTN.
  • Normal Bend Type, PFTR.
  • Reversed Bend Type).
  • Minimum 100,000 program/erase cycles.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29DL400TC_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20866-2E FLASH MEMORY CMOS 4M (512K × 8/256K × 16) BIT MBM29DL400TC-55/-70/-90/-12/MBM29DL400BC-55/-70/-90/-12 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV400TC/BC) 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 55 ns maximum access time • Sector erase architecture Two 16K byte, four 8K bytes, two 32K byte, and six 64K bytes. Any combination of sectors can be concurrently erased.
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