MB81EDS516445 - 512M Bit (4 bank x 2M word x 64 bit)

Product Overview

Fujitsu

Datasheet Details

Part number	MB81EDS516445
Manufacturer	Fujitsu
File Size	449.05 KB
Description	512M Bit (4 bank x 2M word x 64 bit)
Datasheet	MB81EDS516445 Datasheet
Additional preview pages of the MB81EDS516445 datasheet.

Product details

Description

The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM ) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536,870,912 storages accessible in a 64-bit format. : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan

Features

S.
2 M word × 64 bit × 4 banks organization.
DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C).
Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V.
Junction Temperature: TJ =.
10 °C to + 125 °C.
1.8 V-CMOS compatible inputs.
Burst Length: 2, 4, 8, 16.
CAS latency: 2, 3, 4.
Clock Stop capability during idle periods.
Auto.

📁 Similar Datasheet

MB81ES171625 - SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory (Fujitsu Media Devices Limited)
MB81ES653225 - Consumer/Embedded Application Specific Memory (Fujitsu Media Devices Limited)
MB81 - Single Phase Bridge Rectifier (Micro Commercial Components)
MB810 - Single Phase Bridge Rectifier (Micro Commercial Components)
MB8117800A - 2 M X 8 BIT FAST PAGE MODE DYNAMIC RAM (ETC)
MB814400A-70PFTN - CMOS 4M-Bit DRAM (ETC)
MB81C4251 - 1M-Bit Dual Port CMOS DRAM (Fujitsu Media Devices)
MB81C4253 - 1M-Bit Dual Port CMOS DRAM (Fujitsu Media Devices)

Other Datasheets by Fujitsu

MB81EDS516545 - 512M Bit (4 bank x 2M word x 64 bit)
MB81EDS256445 - 256M Bit (4 bank x 1M word x 64 bit)
MB811643242A - 2 x 512K x 32-Bit SDRAM
MB8116E - MOS DRAM
MB8116H - MOS DRAM
MB8116NC - MOS DRAM

Published: Jul 30, 2011 |