Additional preview pages of the MB84VD2008 datasheet.
Product details
Features
Power supply voltage of 2.7 to 3.6 V.
High performance 100 ns maximum access time.
Operating Temperature.
20 to +85°C.
FLASH MEMORY.
Simultaneous operations Read-while Erase or Read-while-Program.
Minimum 100,000 write/erase cycles.
Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase.
MB84VD2008 Datasheet
