FHX35X Datasheet (Fujitsu Media Devices Limited)

FHX35X, Low Noise HEMT

The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.

This HEMT combines high transconductance, low gate capacitance and low leakage current; all i

FHX35X Features

* High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability LG PACKAGE ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Tem