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P08N50E FMP08N50E

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Description

FMP08N50E Super FAP-E3 series .
Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Rep.

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Datasheet Specifications

Part number
P08N50E
Manufacturer
Fuji Electric
File Size
462.73 KB
Datasheet
P08N50E-FujiElectric.pdf
Description
FMP08N50E

Features

* Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSF

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