FMV19N60ES - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

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Datasheet Details

Part number: FMV19N60ES
Manufacturer: Fuji Electric
File Size: 617.98 KB
Datasheet: FMV19N60ES_FujiElectric.pdf
Description: N-CHANNEL SILICON POWER MOSFET

FMV19N60ES Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 600 600 ±19 ±76 ±30 19 799 13 4.8 100 2.16 130 150 -55 t

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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Published: Mar 7, 2012 |