FMV06N60ES - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

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Datasheet Details

Part number	FMV06N60ES
Manufacturer	Fuji Electric
File Size	597.25 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMV06N60ES_FujiElectric.pdf

FMV06N60ES Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 600 600 ±6 ±24 ±30 6 313.7 3.7 3.8 100 2.16 37 150 -55

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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Published: Mar 7, 2012 |