FMR19N60E - N-CHANNEL SILICON POWER MOSFET

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Outline Drawings [mm] TO-3PF.

Fuji Electric

📥 Download Datasheet

Datasheet Details

Part number	FMR19N60E
Manufacturer	Fuji Electric
File Size	382.85 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMR19N60E Datasheet

📁 Similar Datasheet

FMR19N60ES - N-Channel MOSFET (INCHANGE)
FMR-202 - 27MHz Receiver (ETC)
FMR-202 - 27MHz Receiver (Elsema)
FMR-G5HS - Damper Diodes (Sanken electric)
FMR09N90E - N-Channel MOSFET (INCHANGE)
FMR0H104ZF - Supercapacitors (KEMET)
FMR0H473ZF - Supercapacitors (KEMET)
FMR0V104ZF - Supercapacitors (KEMET)
FMR202 - 27MHz Receiver (Elsema)
FMR202 - 27MHz Receiver (ETC)

Other Datasheets by Fuji Electric

FMR19N60ES - N-CHANNEL SILICON POWER MOSFET
FMR11N90E - N-CHANNEL SILICON POWER MOSFET
FMR17N60ES - N-CHANNEL SILICON POWER MOSFET
FMR09N90E - N-CHANNEL SILICON POWER MOSFET
FMR23N60E - N-CHANNEL SILICON POWER MOSFET

Full PDF Text Transcription

Click to expand full text

FMR19N60E Super FAP-E3 series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.

Published: Jun 9, 2017 |