FMP06N60ES - N-CHANNEL SILICON POWER MOSFET

Fuji Electric

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Datasheet Details

Part number	FMP06N60ES
Manufacturer	Fuji Electric
File Size	548.82 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMP06N60ES_FujiElectric.pdf

FMP06N60ES Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 600 600 ±6 ±24 ±30 6 313.7 10.5 3.8 100 2.02 105 150 -55 to + 150 Unit V V A A

Features

Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability FUJI POWER MOSFET N-.

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Published: Oct 22, 2013 |