FMI06N60ES - N-CHANNEL SILICON POWER MOSFET

Product Overview

Fuji Electric

Datasheet Details

Part number	FMI06N60ES
Manufacturer	Fuji Electric
File Size	420.25 KB
Description	N-CHANNEL SILICON POWER MOSFET
Datasheet	FMI06N60ES Datasheet
Additional preview pages of the FMI06N60ES datasheet.

Product details

Description

Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID IDP VGS IAR EAS EAR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Characteristics 600 600 ±6 ±24 ±30 6 313.7 10.5 3.8 100 1.67 105 150 -55 to +150 Equivalent

Features

Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.7±0.5V) High avalanche durability.

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Published: Dec 31, 2024 |