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2SK3930-01S - N-CHANNEL SILICON POWER MOSFET

Download the 2SK3930-01S datasheet PDF. This datasheet also covers the 2SK3930-01L variant, as both devices belong to the same n-channel silicon power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3930-01L-FujiElectric.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3930-01L,S,SJ N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings (mm) 200406 See to P4 Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 600 V Equivalent circuit schematic Drain(D) VDSX 600 V VGS=-30V Continuous Drain Current ID 11 A Pulsed Drain Current ID(puls] ±44 A Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recove
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