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2SK3523-01R
FUJI POWER MOSFET
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-3PF
Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
500
V
Continuous drain current
VDSX *5 ID
500
V
±25
A
Equivalent circuit schematic
Pulsed drain current
ID(puls]
±100
A
Gate-source voltage
VGS
±30
V
Repetitive or non-repetitive
IAR
*2
25
A
Drain(D)
Maximum Avalanche Energy
EAS
*1
336.