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2SK3468-01 - N-Channel MOSFET

Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-.

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Full PDF Text Transcription

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2SK3468-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage VDS 500 V Continuous drain current ID ±12 A Pulsed drain current ID(puls] ±48 A Gate-source voltage VGS ±30 V Repetitive or non-repetitive IAR *2 12 A Maximum Avalanche Energy EAS *1 217 mJ Maximum Drain-Source dV/dt dVDS/dt 20 kV/µs Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs Max. power dissipation PD Ta=25°C Tc=25°C 2.
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