Datasheet4U Logo Datasheet4U.com

2SK2516-01L - N-channel MOS-FET

Features

  • High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 30V 13mΩ 50A 80W > Outline Drawing >.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SK2510 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK2511 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK2512 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK2514 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK2515 - SWITCHING N-CHANNEL POWER MOS FET (NEC)
  • 2SK2503 - Small switching Transistors (Rohm)
  • 2SK2503 - Silicon N-Channel MOSFET (Guangdong Kexin Industrial)
  • 2SK2503 - Transistor (TY Semiconductor)
  • 2SK2504 - Small switching Transistors (Rohm)
  • 2SK2504 - Silicon N-Channel MOSFET (Guangdong Kexin Industrial)
Other Datasheets by Fuji Electric

Full PDF Text Transcription

Click to expand full text
2SK2516-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 30V 13mΩ 50A 80W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max.
Published: |