MWE6IC9080GNR1, MWE6IC9080NR1 - RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor

The MWE6IC9080GNR1 by Freescale Semiconductor is a RF LDMOS Wideband Integrated Power Amplifiers. Below is the official datasheet preview.

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MWE6IC9080GNR1 RF LDMOS Wideband Integrated Power Amplifiers by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MWE6IC9080GNR1** RF LDMOS Wideband Integrated Power Amplifiers datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MWE6IC9080GNR1, MWE6IC9080NR1
Manufacturer	Freescale Semiconductor
File Size	763.25 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	MWE6IC9080NR1_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MWE6IC9080GNR1, MWE6IC9080NR1. Please refer to the document for exact specifications by model.
Additional preview pages of the MWE6IC9080GNR1 datasheet.

MWE6IC9080GNR1 Product details

Description

6.8 pF Chip Capacitors 4.7 pF Chip Capacitors 33 pF Chip Capacitors 4.3 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 470 μF, 63 V Electrolytic Capacitors, Radial 0.1 pF Chip Capacitor 1.0 pF Chip Capacitor 4.12 KΩ, 1/4 W Chip Resistors 0.030″, εr = 2.8 Part Number ATC100B6R8CT500XT ATC100B4R7CT500XT ATC100B330JT500XT ATC100B4R3CT500XT GRM55DR61H106KA88L MCGPR63V477M13X26--RH ATC100B0R1BT500XT ATC100B1R0BT500XT CRCW12064K12FKEA IS680 280 Manufacturer ATC ATC ATC ATC Murata Multicomp ATC

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters.
On--Chip Matching (50 Ohm Input, DC Blocked).
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 VGS2 VGS1 RFin RFout/VDS2 CASE 1617-02 TO-27.

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Published: Jun 29, 2010 |