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MW7IC008NT1 RF LDMOS Wideband Integrated Power Amplifier

MW7IC008NT1 Description

Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev.1, 9/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifier Th.

MW7IC008NT1 Features

* Broadband, Single Matching Network from 20 to 1000 MHz
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
* In Tape and Reel. T1 Suffix

MW7IC008NT1 Applications

* Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA Frequency 100 MHz @ 11 W CW 400 MHz @ 9 W CW 900 MHz @ 6.5 W CW Gps (dB) 23.5 22.5 23.5 PAE (%) 55 41 34 MW7IC008NT1 100 - 1000 MHz, 8 W PEAK, 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
* Capable of Handli

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Datasheet Details

Part number
MW7IC008NT1
Manufacturer
Freescale Semiconductor
File Size
318.32 KB
Datasheet
MW7IC008NT1_FreescaleSemiconductor.pdf
Description
RF LDMOS Wideband Integrated Power Amplifier

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LDMOS Wideband Integrated Power Amplifier Freescale Semiconductor
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