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MW4IC2230NBR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MW4IC2230NBR1 datasheet PDF. This datasheet also covers the MW4IC2230GNBR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

General Description

10 μF, 35 V Tantalum Capacitors 8.2 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 0.3 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJD106K035 100B8R2CW 100B1R8BW 100B0R3BW Manufacturer AVX ATC ATC ATC MW4IC2230NBR1 MW4IC2230GNBR1 4 RF Device Data Freescale Semiconductor w

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function.
  • On - Chip Current Mirror gm Reference FET for Self Biasing.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW4IC2230GNBR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MW4IC2230GNBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW4IC001MR4 RF LDMOS Wideband Integrated Power Amplifiers
MW4IC001NR4 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.