MRF8S21200HSR6, MRF8S21200HR6 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF8S21200HSR6 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF8S21200HSR6 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF8S21200HSR6** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF8S21200HSR6, MRF8S21200HR6
Manufacturer	Freescale Semiconductor
File Size	345.17 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S21200HR6_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF8S21200HSR6, MRF8S21200HR6. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF8S21200HSR6 datasheet.

MRF8S21200HSR6 Product details

Description

8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 0.6 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 0.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 22 Ω, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors 0.030″, εr = 3.5 Part Number ATC100B8R2CT500XT ATC100B0R2BT500XT ATC100B0R6BT500XT C5750X5R1H106MT ATC100B0R5BT500XT ATC100B0R8BT500XT ATC100B0R3BT500XT MCGPR63V477M13X26 - RH CRCW120622R0FKEA CRCW120612R0FKEA CRCW12060000Z0EA

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
RoHS Compliant.
In Tape and Reel. R6 Suffix = 150 Units per 56.

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Published: Feb 9, 2010 |