Datasheet4U Logo Datasheet4U.com

MRF8S21200HSR6 - RF Power Field Effect Transistors

Download the MRF8S21200HSR6 datasheet PDF. This datasheet also covers the MRF8S21200HR6 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

8.2 pF Chip Capacitors 0.2 pF Chip Capacitor 0.6 pF Chip Capacitor 10 μF, 50 V Chip Capacitors 0.5 pF Chip Capacitor 0.8 pF Chip Capacitor 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 22 Ω, 1/4 W Chip Resistor 12 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors 0.030″, εr = 3.5 Part Numb

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • RoHS Compliant.
  • In Tape and Reel. R6 Suffix = 150 Units per 56.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF8S21200HR6_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF8S21140HR3 RF Power Field Effect Transistors NXP
MRF8S21140HSR3 RF Power Field Effect Transistors NXP
MRF8S26060HR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26060HSR3 RF Power Field Effect Transistors Motorola Semiconductor
MRF8S26120HR3 RF Power Field Effect Transistor Motorola

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF8S21200HR6 RF Power Field Effect Transistors
MRF8S18120HR3 RF Power Field Effect Transistors
MRF8S18120HSR3 RF Power Field Effect Transistors
MRF8S18210WGHSR3 RF Power Field Effect Transistors
MRF8S18210WHSR3 RF Power Field Effect Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 48 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.8 18.1 18.1 hD (%) 32.6 32.6 32.9 Output PAR (dB) 6.4 6.3 6.2 ACPR (dBc) - 37.7 - 37.1 - 36.2 MRF8S21200HR6 MRF8S21200HSR6 2110 - 2170 MHz, 48 W AVG.
Published: |