MRF5S19090HSR3, MRF5S19090HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

The MRF5S19090HSR3 by Freescale Semiconductor is a RF Power Field Effect Transistors. Below is the official datasheet preview.

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MRF5S19090HSR3 RF Power Field Effect Transistors by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRF5S19090HSR3** RF Power Field Effect Transistors datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRF5S19090HSR3, MRF5S19090HR3
Manufacturer	Freescale Semiconductor
File Size	445.84 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S19090HR3_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF5S19090HSR3, MRF5S19090HR3. Please refer to the document for exact specifications by model.
Additional preview pages of the MRF5S19090HSR3 datasheet.

MRF5S19090HSR3 Product details

Description

Part Number 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 100B2.7BP 500X 44F3358 D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Newark Newark Newark Garrett Electronics MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 3 C8 C7 VGG R1 B1 R2 C3 C4C5 CUT OUT AREA R3 C6 W1 C11 C12 R4 C13 VDD C9 C2 C10 C1 C14 C15 MRF5S19090 Rev 02

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19090HR3 MRF5S19090HSR3 1930- 1990 MHz, 18 W AVG. , 28 V 2 x N - CDMA.

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Published: Feb 26, 2007 |