MRF377HR3 - RF Power Field-Effect Transistors

Freescale Semiconductor

Datasheet Details

Part number	MRF377HR3
Manufacturer	Freescale Semiconductor
File Size	1.28 MB
Description	RF Power Field-Effect Transistors
Datasheet	MRF377HR3_FreescaleSemiconductor.pdf

Characterized with Series Equivalent Large--Signal Impedance Parameters.
Internally Matched for Ease of Use.
Device Designed for Push--Pull Operation Only.
Integrated ESD Protection.
Excellent Thermal Stability.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF377H Rev. 2, 3/200.

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Published: Jul 16, 2009 |