MMA20312BVT1 Datasheet (Freescale Semiconductor) - Heterojunction Bipolar Transistor

MMA20312BVT1, Heterojunction Bipolar Transistor

Part Number Manufacturer C1, C5 22 pF Chip Capacitors 06033J220GBS AVX C2 1.8 pF Chip Capacitor 06035J1R8BBS AVX C3 2.2 pF Chip Capacitor 06035J2R2BBS AVX C4 5.6 pF Chip Capacitor 06035J5R6BBS AVX C6, C7, C9 Components Not Placed C8, C18 1 F Chip Capacitors GRM188R61A105KA61

Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2 stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications.

It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD SCDMA, PCS, UMTS and LTE at operating

MMA20312BVT1 Features

* Frequency: 1800

* 2200 MHz

* P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)

* Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)

* OIP3: 44.5 dBm @ 2140 MHz (W

* CDMA Application Circuit)

* Active Bias Control (adjustable externally)

* Single 3 to 5 V S