MHE1003N - RF Power LDMOS Transistor

Product Overview

Freescale Semiconductor

Part number	MHE1003N
Manufacturer	Freescale Semiconductor
File Size	353.53 KB
Description	RF Power LDMOS Transistor
Datasheet	MHE1003N Datasheet
Additional preview pages of the MHE1003N datasheet.

Characterized with series equivalent large--signal impedance parameters and common source S--parameters.
Internally pre--matched for ease of use.
Qualified for operation up to 28 Vdc.
Integrated ESD protection.
150C case operating temperature.
225C die temperature capability Target.

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Published: Oct 18, 2018 |