MD7P19130HR3 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MD7P19130HR3, RF Power Field Effect Transistors

Short Ferrite Bead 47 μF, 50 V Electrolytic Capacitor 100 μF, 50 V Electrolitic Capacitor 1.0 μF Chip Capacitor 0.1 μF Chip Capacitors 11 pF Chip Capacitors 13 pF Chip Capacitor 8.2 pF Chip Capacitor 22 μF, 35 V Tantalum Capacitor 470 μF, 63 V Electrolytic Capacitor 10 μF, 50 V Chip Capacitor 10 Ω,

Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev.

0, 5/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz.

Suitable for CDMA and multicarrier amplifier applications.

To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications.

Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1250 m

MD7P19130HR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Cla