3DA3807 - SILICON NPN TRANSISTOR

Datasheet Details

Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICM PC PC(TC=25℃) Tj Tstg 30 25 15 2.0 4.0 1.2 15 150 -55～150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) fT Cob VCE(sat) VBE(sat) ton tstg tf IC=10μA IE=0 IC=1.0mA REB=∞ IE=10μA IC=0 VCB=20V IE=0 VEB=10V IC=0 VCE=5.0V IC=500.

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Published: Dec 24, 2016 |