FTK1N60P - N-CHANNEL MOSFET

First Silicon

FTK1N60P Datasheet Preview — Preview of FTK1N60P PDF

Datasheet Details

Part number	FTK1N60P
Manufacturer	First Silicon
File Size	215.55 KB
Description	N-CHANNEL MOSFET
Datasheet	FTK1N60P-FirstSilicon.pdf

FTK1N60P Product details

Description

The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

RDS(ON) = 9 .6Ω@VGS =10V.
Ultra Low gate charge (typical 5.0nC).
Low reverse transfer capacitance (CRSS = typical 3.5 pF).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO - 251 TO - 252 P: 1 TO - 220 F: 1 TO - 220F 1.Gate 3 Source.

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Published: Jan 14, 2015 |