FTK1N60P Datasheet (First Silicon)

FTK1N60P, N-CHANNEL MOSFET

The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in power supplies, PWM

FTK1N60P Features

* RDS(ON) = 9 .6Ω@VGS =10V

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (CRSS = typical 3.5 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO -