FTB1366 - PNP Transistor

Features

Low VCE(sat): VCE(sat)=-1.0V(Max. )(IC/IB=-2A/-0.2A) Complementary to FTD2058 TO-220F 1. BASE 2.

First Silicon

Datasheet Details

Part number	FTB1366
Manufacturer	First Silicon
File Size	250.84 KB
Description	PNP Transistor
Datasheet	FTB1366 Datasheet
Additional preview pages of the FTB1366 datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA FTB1366 FTB1366 TRANSISTOR (PNP) FEATURES Low VCE(sat): VCE(sat)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Complementary to FTD2058 TO-220F 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -3 A PC Collector power dissipation 2W TJ Junction temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3.

Published: Jul 13, 2016 |