FIR120N055PG - N-Channel Enhancement Mode Power Mosfet

First Semiconductor

The FIR120N055PG by First Semiconductor is a N-Channel Enhancement Mode Power Mosfet. Below is the official datasheet preview.

Datasheet Details

Part number	FIR120N055PG
Manufacturer	First Semiconductor
File Size	4.61 MB
Description	N-Channel Enhancement Mode Power Mosfet
Datasheet	FIR120N055PG-FirstSemiconductor.pdf
Additional preview pages of the FIR120N055PG datasheet.

The FIR120N055PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

ƽ VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation ƽ Special process technology for high ESD capability.

📁 FIR120N055PG Similar Datasheet

Other Datasheets by First Semiconductor

Published: Feb 4, 2025 |