Datasheet4U Logo Datasheet4U.com

LP3000P100 PACKAGED 2W POWER PHEMT

LP3000P100 Description

PACKAGED 2W POWER PHEMT * .
AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility.

LP3000P100 Features

* 33 dBm Output Power at 1-dB Compression at 15 GHz
* 8 dB Power Gain at 15 GHz
* 60% Power-Added Efficiency LP3000P100

LP3000P100 Applications

* The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µ m x 3000 µ m Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimiz

📥 Download Datasheet

Preview of LP3000P100 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • LP30-1600 - POWER TRANSFORMER (Superworld Electronics)
  • LP30-1600F - POWER TRANSFORMER (Superworld Electronics)
  • LP30-200 - POWER TRANSFORMER (Superworld Electronics)
  • LP30-200F - POWER TRANSFORMER (Superworld Electronics)
  • LP30-400 - POWER TRANSFORMER (Superworld Electronics)
  • LP30-400F - POWER TRANSFORMER (Superworld Electronics)
  • LP30-800 - POWER TRANSFORMER (Superworld Electronics)
  • LP30-800F - POWER TRANSFORMER (Superworld Electronics)

📌 All Tags

PACKAGED POWER PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors LP3000P100-like datasheet