LP1500SOT2232 Low Noise/ High Linearity Packaged PHEMT

Filtronic Compound Semiconductors

LP1500SOT2232 Description

Filtronic Solid State .
AND APPLICATIONS The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobili.

LP1500SOT2232 Features

* LP1500SOT223 Low Noise, High Linearity Packaged PHEMT
* +27 dBm Typical Power at 1800 MHz 15 dB Typical Power Gain at 1800 MHz 1.0 dB Typical Noise Figure +42 dBm Typical Intercept Point Color-coded by IDSS range GATE SOURCE SOURCE DRAIN (TOP V

LP1500SOT2232 Applications

* The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gat

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LP1500SOT2232 Datasheet Preview — Preview of LP1500SOT2232 PDF

Datasheet Details

Part number: LP1500SOT2232
Manufacturer: Filtronic Compound Semiconductors
File Size: 69.84 KB
Datasheet: LP1500SOT2232_FiltronicCompoundSemiconductors.pdf
Description: Low Noise/ High Linearity Packaged PHEMT

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Low Noise High Linearity Packaged PHEMT Filtronic Compound Semiconductors

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