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LMA110B - .5-8GHz MESFET Amplifier

Description

The Filtronic LMA110B is a GaAs monolithic distributive amplifier which operates from 0.5 to 8 GHz.

This amplifier produces a typical gain of 12.5dB with a noise figure of 3.5dB.

The LMA110B is suitable for wide-band low noise gain block, EW and commercial PCN applications.

Features

  • 3.5dB Typical Noise Figure 12.5dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return Loss Typical 0.5-6GHz Frequency Bandwidth +8 Volts Single Bias Supply DC Decoupled RF Input and Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm .5-8GHz MESFET Amplifier LMA110B.

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Datasheet Details

Part number LMA110B
Manufacturer Filtronic Compound Semiconductors
File Size 106.35 KB
Description .5-8GHz MESFET Amplifier
Datasheet download datasheet LMA110B Datasheet

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Other Datasheets by Filtronic Compound Semiconductors

Part Number Description
LMA110 .5-6 GHz MESFET Amplifier
LMA110 .5-8GHz MESFET Amplifier
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Filtronic Solid State Features • • • • • • • • • • 3.5dB Typical Noise Figure 12.5dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return Loss Typical 0.5-6GHz Frequency Bandwidth +8 Volts Single Bias Supply DC Decoupled RF Input and Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm .5-8GHz MESFET Amplifier LMA110B Description The Filtronic LMA110B is a GaAs monolithic distributive amplifier which operates from 0.5 to 8 GHz. This amplifier produces a typical gain of 12.5dB with a noise figure of 3.5dB. The LMA110B is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization.
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