FP100 - HIGH PERFORMANCE PHEMT

Filtronic Compound Semiconductors

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Datasheet Details

Part number	FP100
Manufacturer	Filtronic Compound Semiconductors
File Size	32.67 KB
Description	HIGH PERFORMANCE PHEMT
Datasheet	FP100_FiltronicCompoundSemiconductors.pdf

FP100 Product details

Description

AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The FP100

Features

S.
14 dBm P-1dB at 12 GHz.
9 dB Power Gain at 12 GHz.
3.0 dB Noise Figure at 12 GHz.

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Published: Apr 1, 2005 |