NDT456P - P-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

Part number	NDT456P
Manufacturer	Fairchild ↗
File Size	243.34 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDT456P_FairchildSemiconductor.pdf

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

-7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDT456P Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulse.

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Published: May 12, 2005 |