NDT455N - N-Channel Enhancement Mode Field Effect Transistor

Fairchild

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Datasheet Details

Part number	NDT455N
Manufacturer	Fairchild ↗
File Size	228.17 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDT455N_FairchildSemiconductor.pdf

NDT455N Product details

Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

11.5 A, 30 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.02 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current T A = 25°C unless otherwise noted NDT455N 30 20 (Note 1a) Units V V A.

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NDT453N - N-Channel Enhancement Mode Field Effect Transistor

Published: May 12, 2005 |