NDP410AE - N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

Part number	NDP410AE
Manufacturer	Fairchild ↗
File Size	74.01 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	NDP410AE_FairchildSemiconductor.pdf

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Published: May 12, 2005 |