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TN3467A / MMPQ3467
Discrete POWER & Signal Technologies
TN3467A
MMPQ3467
E B E B E B
E
B
C
TO-226
B E
SOIC-16
C
C
C
C
C
C
C
C
PNP Switching Transistor
This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 40 5.0 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
MMPQ3467 Datasheet
