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MMBTA14 - NPN Darlington Transistor

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MPSA14 / MMBTA14 / PZTA14 Discrete POWER & Signal Technologies MPSA14 MMBTA14 C PZTA14 C E C B E C B TO-92 E SOT-23 Mark: 1N B SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 30 30 10 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
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