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2N5088 / MMBT5088 / 2N5089 / MMBT5089
Discrete POWER & Signal Technologies
2N5088 2N5089
MMBT5088 MMBT5089
C
E C B
TO-92
E
SOT-23
Mark: 1Q / 1R
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
2N5088 2N5089 2N5088 2N5089
Value
30 25 35 30 4.5 100 -55 to +150
Units
V V V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
MMBT5089 Datasheet
