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MJD210 - PNP Transistor

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MJD210 MJD210 D-PAK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Peck Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Storage Temperature Value - 40 - 25 -8 -5 - 10 -1 12.5 1.
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