SSR1N60A Datasheet - Fairchild Semiconductor

SSR1N60A, Advanced Power MOSFET

www.DataSheet4U.com Advanced Power MOSFET

Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) SSR/U1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 0.9 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2.

SSR1N60A_FairchildSemiconductor.pdf