SSM1N45B Datasheet (Fairchild Semiconductor)

SSM1N45B, 450V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

SSM1N45B Features

* 0.5A, 450V, RDS(on) = 4.25Ω @VGS = 10 V

* Low gate charge ( typical 6.5 nC)

* Low Crss ( typical 6.5 pF)

* 100% avalanche tested

* Improved dv/dt capability

* Gate-Source Voltage ± 50V guaranteed D S G SOT-223 SSM Series G! D !

* ◀▲