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SGL5N150UF - IGBT

Description

Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses.

SGL5N150UF is designed for the Switching Power Supply applications.

Features

  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A.
  • High Input Impedance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGL5N150UF SGL5N150UF IGBT General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGL5N150UF is designed for the Switching Power Supply applications. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.
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