RFG60P06E P-Channel Power MOSFET

Fairchild Semiconductor

Description

RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET The RFG60P06E P-Channel power MOSFET is manufactured using t.

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Datasheet Specifications

Part number: RFG60P06E
Manufacturer: Fairchild Semiconductor
File Size: 380.31 KB
Datasheet: RFG60P06E_FairchildSemiconductor.pdf
Description: P-Channel Power MOSFET

Features

* 60A, 60V
* rDS(ON) = 0.030Ω
* Temperature Compensating PSPICE® Model
* 2kV ESD Rated
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* 175oC Operating Temperature
* Related Literature Symbol D Ordering Information PART NUMBER

Applications

* such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD. Formerly developmental type TA09836. Featur

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RFG60P06E P-Channel Power MOSFET Fairchild Semiconductor

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