Datasheet Details
Part number:
RFD3055SM
Manufacturer:
Fairchild Semiconductor
File Size:
418.35 KB
Description:
N-Channel Power MOSFET
Features
* 12A, 60V
* rDS(ON) = 0.150Ω
* Temperature Compensating PSPICE® Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* 175oC Operating Temperature
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Bo
RFD3055SM_FairchildSemiconductor.pdf
RFD3055SM, N-Channel Power MOSFET
RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipo
RFD3055SM Distributor
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